1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization - Département Communications et Electronique Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Photonics Année : 2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Résumé

This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.
Fichier principal
Vignette du fichier
B.Dong_JPhys2020.pdf (1.37 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02949237 , version 1 (25-09-2020)

Identifiants

Citer

Bozhang Dong, Xavier C de Labriolle, Songtao Liu, Mario Dumont, Heming Huang, et al.. 1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization. Journal of Physics: Photonics, 2020, 2, ⟨10.1088/2515-7647/aba5a6⟩. ⟨hal-02949237⟩
166 Consultations
111 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More