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External Control in Semiconductor Quantum Nanostructure Lasers for Future Integrated Photonic Devices

Frédéric Grillot 1, 2
1 GTO - Télécommunications Optiques
LTCI - Laboratoire Traitement et Communication de l'Information
Abstract : Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. Quantum nanostructure lasers have attracted a lot of interest in the last decade owing to their expected remarkable properties arising from charge carrier confinement in three spatial dimensions. Unlike quantum-well lasers, semiconductor quantum nanostructure devices exhibit very low threshold currents [1], high differential gain [2], and reduced linewidth enhancement factor [3]. Semiconductor quantum nanostructure mode-locked lasers (MLLs) are also important as compact and cost-effective sources of picosecond or sub-picosecond optical pulses with moderate peak powers. They have potential use in various fields including optical interconnects for clock distribution at an inter-chip/intra-chip level as well as high bit-rate optical time division multiplexing (OTDM), diverse waveform generation, and microwave signal generation [4]. However, quantum nanostructure based devices may have intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is to use external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser’s dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity [5]. The noise performance is also a key element for semiconductor MLLs in OTDM communications. The external stabilization methods to improve the timing stability in passive MLLs have been studied and an all-microwave measurement technique has also been developed to determine the pulse-to- pulse rms timing jitter. Compared to the conventional optical cross-correlation technique, the new method provides an alternative and simple approach to characterize the timing jitter in a passive MLL [6]. In this paper, the effects of external control techniques on the overall performance of the semiconductor quantum nanostructure lasers will be discussed. This research intends to provide the building-blocks for the realization of innovative and integrated photonic devices for applications in telecommunications, defense and security as well as for future optical interconnect.
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Submitted on : Wednesday, September 4, 2019 - 2:50:45 PM
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  • HAL Id : hal-02278613, version 1



Frédéric Grillot. External Control in Semiconductor Quantum Nanostructure Lasers for Future Integrated Photonic Devices. International Photonics Conference, Dec 2011, Tainan, Taiwan. ⟨hal-02278613⟩



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