Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device - Télécom Paris Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device

Fichier non déposé

Dates et versions

hal-02287632 , version 1 (13-09-2019)

Identifiants

  • HAL Id : hal-02287632 , version 1

Citer

Hao Cai, You Wang, Lirida Naviner, Weisheng Zhao. Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device. Great Lakes Symposium on VLSI 2017 (GLSVLSI 17), May 2017, Banff, Canada. ⟨hal-02287632⟩
22 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More