Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection

Benjamin Coeffic; Jean-Marc Daveau; Gilles Gasiot; A.E. Pricco; S. Parini; T. Scholastique; Lirida A. B. Naviner; Philippe Roche

Conference Papers Year : 2016

Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection

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Benjamin Coeffic

Function : Author

Jean-Marc Daveau

Function : Author

Gilles Gasiot

Function : Author

A.E. Pricco

Function : Author

S. Parini

Function : Author

T. Scholastique

Function : Author

Lirida A. B. Naviner

Function : Author
PersonId : 737026
IdHAL : lirida-naviner
ORCID : 0000-0002-6320-4153

Secure and Safe Hardware

Département Communications & Electronique

Philippe Roche

Function : Author

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal.telecom-paris.fr/hal-02287892

Submitted on : Friday, September 13, 2019-5:28:03 PM

Last modification on : Tuesday, February 28, 2023-3:36:25 PM

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hal-02287892 , version 1 (13-09-2019)

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HAL Id : hal-02287892 , version 1

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Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, A.E. Pricco, S. Parini, et al.. Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection. Proceedings of IEEE Workshop on Silicon Errors in Logic - System Effects (SELSE), Mar 2016, Austin, Texas, United States. ⟨hal-02287892⟩

Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection

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