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Conference papers
Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection
Benjamin Coeffic
Jean-Marc Daveau
Gilles Gasiot
A.E. Pricco
S. Parini
T. Scholastique
Lirida A. B. Naviner
1, 2
Philippe Roche
1
SSH - Secure and Safe Hardware (46 rue Barrault
75013 Paris - France)
- LTCI - Laboratoire Traitement et Communication de l'Information (46 rue Barrault F-75634 Paris Cedex 13 - France)
- Télécom ParisTech (46 rue Barrault 75634 Paris Cedex 13 - France)
- IMT - Institut Mines-Télécom [Paris] (37-39 Rue Dareau, 75014 Paris - France)
2
COMELEC - Département Communications & Electronique (46, rue Barrault
75013 Paris - France)
- Télécom ParisTech (46 rue Barrault 75634 Paris Cedex 13 - France)
Document type :
Conference papers
Complete list of metadatas
https://hal.telecom-paris.fr/hal-02287892
Contributor : Telecomparis Hal <>
Submitted on : Friday, September 13, 2019 - 5:28:03 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:54 PM
Contributor : Telecomparis Hal <>
Submitted on : Friday, September 13, 2019 - 5:28:03 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:54 PM
Identifiers
- HAL Id : hal-02287892, version 1
Collections
LTCI | PARISTECH | INSTITUT-TELECOM | COMELEC | SSH | UNIV-PARIS-SACLAY
Citation
Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, A.E. Pricco, S. Parini, et al.. Radiation Hardening Improvement of a SerDes under Heavy Ions up to 60 MeV.cm2/mg by Layout-Aware Fault Injection. Proceedings of IEEE Workshop on Silicon Errors in Logic - System Effects (SELSE), Mar 2016, Austin, Texas, United States. ⟨hal-02287892⟩
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