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Journal articles
Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects
Nilson Maciel
Author
Elaine Crespo Marques 1, 2
Author
Lirida Alves de Barros Naviner 1, 2
Author
Hao Cai 1, 2
Author
Jun Yang
Author
1
SSH - Secure and Safe Hardware (46 rue Barrault
75013 Paris - France)
- LTCI - Laboratoire Traitement et Communication de l'Information (46 rue Barrault F-75634 Paris Cedex 13 - France)
- Télécom ParisTech (46 rue Barrault 75634 Paris Cedex 13 - France)
- IMT - Institut Mines-Télécom [Paris] (37-39 Rue Dareau, 75014 Paris - France)
2
COMELEC - Département Communications & Electronique (46, rue Barrault
75013 Paris - France)
- Télécom ParisTech (46 rue Barrault 75634 Paris Cedex 13 - France)
Document type :
Journal articles
Complete list of metadatas
https://hal.telecom-paris.fr/hal-02288058
Contributor : Telecomparis Hal <>
Submitted on : Friday, September 13, 2019 - 5:38:27 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:54 PM
Contributor : Telecomparis Hal <>
Submitted on : Friday, September 13, 2019 - 5:38:27 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:54 PM
Links full text
Identifiers
- HAL Id : hal-02288058, version 1
- DOI : 10.3390/jlpea9020015
Collections
LTCI | PARISTECH | INSTITUT-TELECOM | COMELEC | SSH | UNIV-PARIS-SACLAY
Citation
Nilson Maciel, Elaine Crespo Marques, Lirida Alves de Barros Naviner, Hao Cai, Jun Yang. Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects. Journal of Low Power Electronics Applications, 2019, 9 (2), pp.1-14. ⟨10.3390/jlpea9020015⟩. ⟨hal-02288058⟩
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