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OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI

Natalija Jovanovic 1 Olivier Thomas 1 Elisa Vianello 1 Jean-Michel Portal 2 Boris Nikolic 3 Lirida A. B. Naviner 4, 5
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 Berkeley EECS - Department of Electrical Engineering and Computer Sciences
4 SSH - Secure and Safe Hardware
LTCI - Laboratoire Traitement et Communication de l'Information
5 COMELEC - Département Communications & Electronique
Abstract : This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.
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Submitted on : Friday, December 27, 2019 - 6:18:51 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM
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UNIV-TLN | DRT | CEA | CNRS | UNIV-AMU | LETI | IM2NP | SSH | COMELEC | INSTITUT-TELECOM | PARISTECH | LTCI | CEA-GRE

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Natalija Jovanovic, Olivier Thomas, Elisa Vianello, Jean-Michel Portal, Boris Nikolic, et al.. OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI. 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), Jun 2014, Trois Rivières, Canada. ⟨10.1109/NEWCAS.2014.6934003⟩. ⟨hal-02288534⟩

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