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Conference papers
OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI
Abstract : This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.
Cited literature [8 references]
https://hal.telecom-paris.fr/hal-02288534
Contributor : TelecomParis HAL Connect in order to contact the contributor
Submitted on : Friday, December 27, 2019 - 6:18:51 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM
Long-term archiving on: : Saturday, March 28, 2020 - 1:52:26 PM
Contributor : TelecomParis HAL Connect in order to contact the contributor
Submitted on : Friday, December 27, 2019 - 6:18:51 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:04 PM
Long-term archiving on: : Saturday, March 28, 2020 - 1:52:26 PM
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Distributed under a Creative Commons Attribution 4.0 International License