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Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers

J. Duan 1 H. Huang 1 D. Jung 2 J. Norman 2, 3 J. E Bowers 2, 3 F. Grillot 1, 4 
1 LTCI - Laboratoire Traitement et Communication de l'Information
2 Institute for Energy Efficiency, University of California at Santa Barbara, Santa Barbara, CA 93106 USA
3 Materials Department, University of California at Santa Barbara, Santa Barbara, CA 93106 USA
4 CHTM - Center for High Technology Materials
Abstract : This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.
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Submitted on : Monday, October 7, 2019 - 2:03:48 PM
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INSTITUT-TELECOM | PARISTECH | UNIV-PARIS-SACLAY | LTCI | COMELEC | GTO

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J. Duan, H. Huang, D. Jung, J. Norman, J. E Bowers, et al.. Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers. 2018 IEEE Photonics Conference (IPC), Sep 2018, Reston, United States. pp.1-2, ⟨10.1109/IPCon.2018.8527184⟩. ⟨hal-02307227⟩

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