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Relative intensity noise of silicon-based quantum dot lasers

Abstract : This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the p-modulation doped GaAs barrier layer in the active region, a RIN level as low as-150 dB/Hz at 9 GHz is demonstrated. The results show that the p-doping decreases the high-frequency RIN and the damping factor. In the latter, a damping factor up to 30 GHz at three times the threshold is extracted from the RIN spectrum along with a K-factor of 1.7 ns. These results pave the way for high speed and low noise QD devices for future integrated photonics technologies.
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https://hal.telecom-paris.fr/hal-02307311
Contributor : Jianan Duan <>
Submitted on : Wednesday, October 30, 2019 - 8:53:25 PM
Last modification on : Wednesday, June 24, 2020 - 4:19:41 PM

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J. Duan, H. Huang, D. Jung, J. Norman, J. Bowers, et al.. Relative intensity noise of silicon-based quantum dot lasers. 2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8819368⟩. ⟨hal-02307311⟩

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