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Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium

yueguang Zhou 1 Jianan Duan 2, 3, 4 Heming Huang 2, 3, 4 Xuyi Zhao 5 Chunfang Cao 5 Frederic Grillot 2, 3, 4 Cheng Wang 1 
1 School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
2 GTO - Télécommunications Optiques
LTCI - Laboratoire Traitement et Communication de l'Information
3 COMELEC - Département Communications & Electronique
4 IP Paris - Institut Polytechnique de Paris
5 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
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https://hal.telecom-paris.fr/hal-02957699
Contributor : Jianan Duan Connect in order to contact the contributor
Submitted on : Monday, October 5, 2020 - 12:51:54 PM
Last modification on : Wednesday, November 3, 2021 - 6:18:35 AM

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  • HAL Id : hal-02957699, version 1

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INSTITUT-TELECOM | PARISTECH | UNIV-PARIS-SACLAY | LTCI | COMELEC | GTO

Citation

yueguang Zhou, Jianan Duan, Heming Huang, Xuyi Zhao, Chunfang Cao, et al.. Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium. IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 2019. ⟨hal-02957699⟩

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