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Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

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https://hal.telecom-paris.fr/hal-02957717
Contributor : Jianan Duan <>
Submitted on : Monday, October 5, 2020 - 1:12:40 PM
Last modification on : Wednesday, October 14, 2020 - 3:29:38 AM

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  • HAL Id : hal-02957717, version 1

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Jianan Duan, Yueguang Zhou, Bozhang Dong, Heming Huang, Justin Norman, et al.. Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon. Optics Letters, Optical Society of America - OSA Publishing, 2020. ⟨hal-02957717⟩

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